The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Dec. 09, 2014
Hoya Corporation, Tokyo, JP;
HOYA CORPORATION, Tokyo, JP;
Abstract
To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask. A mask blankcomprises a phase-shift filmand a light-shielding filmon a transparent substrate, the phase-shift filmis made of a material with ArF light fastness, and at least one layer in the light-shielding filmis made of a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (1) below:≤9.0×10−1.65×10−7.718×10+3.611×−21.084  Formula (1)