The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2018
Filed:
Aug. 17, 2016
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Miki Moriyama, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
The present techniques provide a method for producing a Group III nitride semiconductor single crystal that is designed to grow a semiconductor single crystal with high reproducibility. The method for producing a Group III nitride semiconductor single crystal comprises adding a seed crystal substrate, Ga, and Na into a crucible, and growing a Group III nitride semiconductor single crystal. In the growth of the Group III nitride semiconductor single crystal, a measuring device is used to detect the reaction of Ga with Na. Ga is reacted with Na with the temperature of the crucible adjusted within a first temperature range of 80° C. to 200° C. After the measuring device detected the reaction of Ga with Na, the temperature of the crucible is elevated up to a growth temperature of the Group III nitride semiconductor single crystal.