The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2018

Filed:

Apr. 13, 2016
Applicant:

Robert Bosch Gmbh, Stuttgart, DE;

Inventors:

Hans Artmann, Boeblingen-Dagersheim, DE;

Arnd Kaelberer, Schlierbach, DE;

Christian Zielke, Eningen Unter Achaim, DE;

Oliver Breitschaedel, Gomaringen, DE;

Peter Borwin Staffeld, Stuttgart, DE;

Assignee:

ROBERT BOSCH GMBH, Stuttgart, DE;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00182 (2013.01); B81B 2203/0118 (2013.01); B81C 2201/014 (2013.01);
Abstract

A method for manufacturing microelectromechanical structures in a layer sequence and a corresponding electronic component having a microelectromechanical structure. The method includes provision of a carrier substrate including a first surface, an application of an insulation layer onto the first surface, an epitaxial growth of a first silicon layer onto the insulation layer, a structuring of the first silicon layer for forming trenches in the first silicon layer, a passivation of the first silicon layer, whereby the trenches are filled and a passivation layer is formed on a side facing away from the first surface, a structuring of the passivation layer, sacrificial areas and functional areas being formed in the first silicon layer, and the sacrificial areas are free of the passivation layer, at least at some points, on a side facing away from the carrier substrate, and, finally, removal of the sacrificial areas.


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