The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

Sep. 06, 2016
Applicants:

Cindy X. Qiu, Brossard, CA;

Ishiang Shih, Brossard, CA;

Chunong Qiu, Brossard, CA;

Andy Shih, Brossard, CA;

Julia Qiu, Brossard, CA;

Yi-chi Shih, Los Angeles, CA (US);

Inventors:

Cindy X. Qiu, Brossard, CA;

Ishiang Shih, Brossard, CA;

Chunong Qiu, Brossard, CA;

Andy Shih, Brossard, CA;

Julia Qiu, Brossard, CA;

Yi-Chi Shih, Los Angeles, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/00 (2006.01); H03H 9/54 (2006.01); H01L 41/187 (2006.01); H03H 9/17 (2006.01); H01L 41/047 (2006.01); C01B 21/072 (2006.01); C01B 21/06 (2006.01); C01G 9/02 (2006.01); C01G 33/00 (2006.01); C01G 23/00 (2006.01);
U.S. Cl.
CPC ...
H03H 9/542 (2013.01); C01B 21/0602 (2013.01); C01B 21/0632 (2013.01); C01B 21/072 (2013.01); C01G 9/02 (2013.01); C01G 23/003 (2013.01); C01G 23/006 (2013.01); C01G 33/006 (2013.01); H01L 41/047 (2013.01); H01L 41/187 (2013.01); H01L 41/1871 (2013.01); H01L 41/1873 (2013.01); H01L 41/1876 (2013.01); H03H 9/171 (2013.01); C01P 2006/40 (2013.01);
Abstract

In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies one for transmit and the other for receive. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The present invention provides frequency tunable film bulk acoustic resonators (FBAR) with different structures. Thin film biasing resistors are integrated into the FBAR structure for DC biasing and RF isolation. A plurality of the present tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying DC biasing voltages to the resonators.


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