The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

May. 30, 2014
Applicant:

Isis Innovation Limited, Oxfordshire, GB;

Inventors:

Henry Snaith, Oxfordshire, GB;

Tomas Leijtens, Oxfordshire, GB;

Antonio Abate, Oxfordshire, GB;

Alan Sellinger, Golden, CO (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/42 (2006.01); H01G 9/00 (2006.01); H01G 9/20 (2006.01);
U.S. Cl.
CPC ...
H01L 51/002 (2013.01); H01G 9/0029 (2013.01); H01G 9/2027 (2013.01); H01G 9/2059 (2013.01); H01L 51/005 (2013.01); H01L 51/006 (2013.01); H01L 51/4226 (2013.01); H01G 9/2013 (2013.01); H01L 51/0035 (2013.01); H01L 51/0036 (2013.01); H01L 51/0056 (2013.01); H01L 51/0059 (2013.01); H01L 2251/305 (2013.01); Y02E 10/542 (2013.01); Y02E 10/549 (2013.01);
Abstract

The present invention relates to the doping of organic semiconductors and processes for producing layers of p-doped organic semiconductors. Disclosed is a process for p-doping organic semiconductors comprising treating the organic semiconductor with an oxidized salt of the organic semiconductor. A process for producing a layer of a p-doped organic semiconductor comprising producing a p-doped organic semiconductor by treating the organic semiconductor with an oxidized salt of the organic semiconductor; disposing a composition comprising a solvent and the p-doped organic semiconductor on a substrate; and removing the solvent is also described. Also disclosed is a process for producing a layer of a p-doped organic semiconductor comprising: disposing a composition comprising a solvent, the organic semiconductor and a protic ionic liquid on a substrate; and removing the solvent. A process for producing a semiconductor device comprising a process for doping an organic semiconductor according to the invention is also described. Finally, a high purity p-dopant composition is described.


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