The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Jan. 12, 2016
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Inventors:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 31/10 (2006.01); H01L 25/065 (2006.01); H01L 33/34 (2010.01); H01L 29/04 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/10 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02505 (2013.01); H01L 25/0657 (2013.01); H01L 29/045 (2013.01); H01L 33/0079 (2013.01); H01L 33/346 (2013.01); H01L 21/02395 (2013.01); H01L 2924/10253 (2013.01);
Abstract
A semiconductor stack includes a substrate composed of a III-V group compound semiconductor, a buffer layer that is arranged on the substrate and that is composed of a III-V group compound semiconductor, and an active layer that is arranged on the buffer layer and that includes a layer composed of a III-V group compound semiconductor containing Sb as a group V element. A region of the buffer layer including a main surface of the buffer layer adjacent to the substrate includes a high-concentration region having a high total concentration of Si and C compared with another adjacent region.