The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Dec. 20, 2016
Joled Inc., Tokyo, JP;
Panasonic Liquid Crystal Display Co., Ltd, Hyogo, JP;
JOLED INC., Tokyo, JP;
PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD., Hyogo, JP;
Abstract
Methods of fabricating a thin-film transistor are provided. The methods include forming a gate electrode above a substrate, a gate insulating layer above the gate electrode, a non-crystalline silicon layer above the gate insulating layer, and a channel protective layer above the non-crystalline silicon layer. The non-crystalline silicon layer and the channel protective layer are processed to form a projecting part. The projecting part has an upper layer composed of the channel protective layer and a lower layer composed of the non-crystalline silicon layer. The projecting part and portions of the non-crystalline silicon layer on sides of the projecting part are irradiated with a laser beam to crystallize at least the non-crystalline silicon layer in the projecting part. An absorptance of the non-crystalline silicon layer for the laser beam is greater in the projecting part than in the portions on the sides of the projecting part.