The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Feb. 03, 2016
Infineon Technologies Americas Corp., El Segundo, CA (US);
Jingjing Chen, Torrance, CA (US);
Infineon Technologies Americas Corp., El Segundo, CA (US);
Abstract
A semiconductor device includes a vertical gate electrode in a gate trench in a semiconductor substrate, and a lateral gate electrode over the semiconductor substrate and adjacent the gate trench, where the lateral gate electrode results in improved electrical performance of the semiconductor device. The improved electrical performance includes an improved avalanche current tolerance in the semiconductor device. The improved electrical performance includes a reduced impact ionization under the gate trench. The improved electrical performance includes a reduced electric field under the gate trench. The lateral gate electrode results in an improved thermal stability in the semiconductor device.