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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9929235 B1

PDFFull Text
Date of Patent:
Mar. 27, 2018

Filed:

Mar. 20, 2017

Semiconductor device and method for fabricating the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jung Gil Yang, Hwaseong-si, KR;

Dong Il Bae, Incheon, KR;

Chang Woo Sohn, Hwaseong-si, KR;

Seung Min Song, Yongin-si, KR;

Dong Hun Lee, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Tu-Tu Ho

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 29/10 (2006.01); H01L 29/165 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 27/0207 (2013.01); H01L 27/0883 (2013.01); H01L 27/0886 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/165 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, a first nanowire spaced apart from a first region of the substrate, a first gate electrode surrounding a periphery of the first nanowire, a second nanowire spaced apart from a second region of the substrate and extending in a first direction and having a first width in a second direction intersecting the first direction, a supporting pattern contacting the second nanowire and positioned under the second nanowire, and a second gate electrode extending in the second direction and surrounding the second nanowire and the supporting pattern.

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