The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

Aug. 30, 2016
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Hai Joon Lee, Suwon-si, KR;

Makoto Kosaki, Suwon-si, KR;

Ji Hyun Park, Suwon-si, KR;

Jong Bong Lim, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 23/48 (2006.01); H01L 27/01 (2006.01);
U.S. Cl.
CPC ...
H01L 28/75 (2013.01); H01L 23/481 (2013.01); H01L 27/016 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/18 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/19105 (2013.01);
Abstract

An electronic component includes a body part and a via part. The body part includes first and second metal layers disposed with at least one dielectric layer interposed therebetween. The via part is disposed in the body part and includes first and second vias penetrating through the body part and selectively connected to the first and second metal layers, respectively. The first and second metal layers contain different metals. In some examples, a first insulating film is disposed between the first metal layer and the second via to electrically insulate the second via from the first metal layer, and a second insulating film is disposed between the second metal layer and the first via to electrically insulate the first via from the second metal layer. A method for forming the electronic component includes use of first and second etchants to selectively etch the first and second metal layers.


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