The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Dec. 30, 2015
Ju-youn Kim, Suwon-si, KR;
Jong-mil Youn, Yongin-si, KR;
Ju-youn Kim, Suwon-si, KR;
Jong-mil Youn, Yongin-si, KR;
Abstract
A semiconductor device and a method of manufacturing the same are disclosed, which may improve the operating performance of a multi-gate transistor in a highly scaled integrated circuit device. The semiconductor device includes a first active fin unit protruding on a first region of a semiconductor substrate and extending along a first direction. The first active fin unit includes at least one first active fin having left and right profiles, which are symmetric to each other about a first center line perpendicular to a top surface of the semiconductor substrate on a cut surface perpendicular to the first direction. A second active fin unit protrudes on a second region of the semiconductor substrate and includes two second active fins, each having a left and right profiles, which are asymmetric to each other about a second center line perpendicular to the top surface of the semiconductor substrate on a cut surface.