The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Feb. 19, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Tae-Jin Yim, Yongin-si, KR;
Sang-Hoon Ahn, Goyang-si, KR;
Thomas Oszinda, Hwaseong-si, KR;
Jong-Min Baek, Seoul, KR;
Byung Hee Kim, Seoul, KR;
Nae-In Lee, Seoul, KR;
Kee-Young Jun, Seongnam-si, KR;
Abstract
A semiconductor device includes an insulating interlayer on a first region of a substrate. The insulating interlayer has a recess therein and includes a low-k material having porosity. A damage curing layer is formed on an inner surface of the recess. A barrier pattern is formed on the damage curing layer. A copper structure fills the recess and is disposed on the barrier pattern. The copper structure includes a copper pattern and a copper-manganese capping pattern covering a surface of the copper pattern. A diffusion of metal in a wiring structure of the semiconductor device may be prevented, and thus a resistance of the wiring structure may decrease.