The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
May. 10, 2016
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Yoshikazu Tsunemine, Ibaraki, JP;
Takayuki Igarashi, Ibaraki, JP;
Assignee:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/7682 (2013.01); H01L 21/76816 (2013.01); H01L 21/76847 (2013.01); H01L 23/522 (2013.01); H01L 23/53295 (2013.01); H01L 23/53238 (2013.01);
Abstract
A semiconductor device, in which an increase in the size of a product can be suppressed and a withstand voltage between wiring layers can be improved, and a manufacturing method thereof are provided. A discontinued part, in which the interface between an interlayer insulating film and a passivation film is discontinued, is formed between a first wiring layer and a second wiring layer that are adjacent to each other with a space therebetween. Both the interlayer insulating film and the passivation film face an air gap in the discontinued part.