The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Mar. 29, 2016
Applicant:
Soitec, Bernin, FR;
Inventors:
Carole David, Crolles, FR;
Anne-Sophie Cocchi, Le Terrasse, FR;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/36 (2006.01); H01L 21/762 (2006.01); H01L 21/324 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76251 (2013.01); H01L 21/3247 (2013.01); H01L 21/76254 (2013.01); H01L 21/76281 (2013.01); H01L 29/51 (2013.01); H01L 29/511 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/11901 (2013.01);
Abstract
A process is used for fabricating a final structure comprising in succession a useful semiconductor layer, a dielectric layer and a carrier substrate. The process comprises providing an intermediate structure including an upper layer, the dielectric layer and the carrier substrate, and finishing the intermediate structure to form the final structure by performing a treatment nonuniformly modifying the thickness of the dielectric layer following a predetermined dissolution profile. The dielectric layer of the intermediate structure has a thickness profile complementary to the predetermined dissolution profile.