The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Nov. 14, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jung-Ho Do, Yongin-si, KR;
Jonghoon Jung, Seongnam-si, KR;
Sanghoon Baek, Seoul, KR;
Seungyoung Lee, Seoul, KR;
Taejoong Song, Seongnam-si, KR;
Jinyoung Lim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of manufacturing a semiconductor device may include forming first trenches that define active patterns extending in a first direction on a substrate, forming first insulating layers filling the first trenches, forming first mask patterns extending in the first direction while having a first width along a second direction perpendicular to the first direction, forming a second mask pattern extending in the first direction while having a second width along the second direction, and forming a second trench that partly defines an active region by executing a first etching process that etches the active patterns and the first insulating layer using the first mask patterns and the second mask pattern.