The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Apr. 03, 2017
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Masanao Yamaoka, Hachioji, JP;
Koichiro Ishibashi, Warabi, JP;
Shigezumi Matsui, Nishitokyo, JP;
Kenichi Osada, Kawasaki, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
A semiconductor device having static memory cells is designed to reduce leakage current and power consumption. The static memory cells are coupled to word lines and bit lines, and the word lines are coupled to word drivers. A first P channel MOS transistor (MOS power switch) has a gate coupled to receive a first control signal, and a second P channel MOS transistor (MOS power switch) has a gate coupled to receive a second control signal different from the first control signal. Source-drain paths of the first and second P channel MOS transistors (MOS power switches) are coupled to respective voltage supply points for different parts of the semiconductor device, such as voltage supply points for the memory cells and the word drivers, or voltage supply points for a logic circuit and the word drivers.