The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Sep. 18, 2014
Applicant:
Tohoku University, Sendai-shi, JP;
Inventors:
Takashi Ohsawa, Sendai, JP;
Tetsuo Endoh, Sendai, JP;
Assignee:
Tohoku University, Miyagi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/08 (2006.01); G11C 11/16 (2006.01); G11C 13/00 (2006.01); G11C 14/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); G11C 11/1697 (2013.01); G11C 13/003 (2013.01); G11C 14/0081 (2013.01); G11C 2013/0071 (2013.01); G11C 2213/74 (2013.01); G11C 2213/79 (2013.01);
Abstract
One end of a current path of a second field-effect transistor is connected to a gate of a first field-effect transistor. One end of a magnetic tunnel junction element is connected to one end of a current path of the first field-effect transistor. A first control terminal is connected to another end of the current path of the first field-effect transistor. A second control terminal is connected to another end of the magnetic tunnel junction element. A third control terminal is connected to another end of the current path of the second field-effect transistor.