The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

Apr. 13, 2015
Applicant:

Huawei Technologies Co., Ltd., Shenzhen, Guangdong, CN;

Inventors:

Yongbing Huang, Beijing, CN;

Mingyu Chen, Beijing, CN;

Yuan Ruan, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 1/32 (2006.01); G06F 9/50 (2006.01); G06F 12/06 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 1/3225 (2013.01); G06F 1/3275 (2013.01); G06F 3/068 (2013.01); G06F 3/0625 (2013.01); G06F 3/0647 (2013.01); G06F 9/5094 (2013.01); G06F 12/0638 (2013.01); G06F 9/5016 (2013.01); G06F 2212/1028 (2013.01); G06F 2212/205 (2013.01); G06F 2212/251 (2013.01); Y02B 60/1225 (2013.01); Y02B 60/1228 (2013.01); Y02B 60/1246 (2013.01); Y02B 60/142 (2013.01); Y02B 60/32 (2013.01);
Abstract

A method for reducing power consumption of a memory system and a memory controller are provided. The method for reducing power consumption of a memory system includes: determining whether a dynamic random access memory DRAM memory module with a low access frequency exists in a memory system; when a DRAM memory module with a low access frequency exists, transfer, according to a size of a working set in the memory system, page data that does not belong to the working set to a non-volatile memory NVM memory module, where the page data that does not belong to the working set is page data that does not need to be accessed when a process runs within preset time.


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