The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

Mar. 24, 2016
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Benjamin M. Johnston, Los Gatos, CA (US);

Thomas L. Laidig, Richmond, CA (US);

Jang Fung Chen, Cupertino, CA (US);

John White, Hayward, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/52 (2006.01); G03B 27/42 (2006.01); G03F 7/20 (2006.01); G01B 11/14 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70775 (2013.01); G01B 11/14 (2013.01); G03F 7/70275 (2013.01); G03F 7/70733 (2013.01);
Abstract

Embodiments of the present disclosure generally relate to apparatus and methods for performing photolithography processes. In one embodiment, a system including multiple interferometers for accurately measuring the location of a substrate during operation is provided. The system may include two chucks, and the two chucks are aligned in a first direction. The interferometers are placed along the first direction to measure the location of the substrate with respect to the first direction. The reduced distance between the interferometers and the chuck improves the accuracy of the measurement of the location of the substrate. In another embodiment, mask pattern data is provided to the system, and the mask pattern data is modified based on location and position information of the substrate. By controlling the mask pattern data with the location and position information of the substrate, less positional errors of the pattern formed on the substrate can be achieved.


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