The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Sep. 30, 2015
Landauer, Inc., Glenwood, IL (US);
Purdue Research Foundation, West Lafayette, IN (US);
Mark Raymond Salasky, St. John, IN (US);
Sean M. Scott, West Lafayette, IN (US);
P. Alexander Walerow, Momence, IL (US);
Daniel John Valentino, Naperville, IL (US);
Dimitrios Peroulis, West Lafayette, IN (US);
PURDUE RESEARCH FOUNDATION, West Lafayette, IN (US);
Abstract
A method and apparatus is disclosed for differentially altering the radiation response across multiple MOSCAP sensors by placing different thin gate materials with different atomic numbers on a series of MOS-based radiation sensors. The secondary electrons created in high-atomic weight materials (such as gold) at lower incident photon energy levels enable a tissue equivalent radiation response and radiations source identification/differentiation. This is a desirable alternative to using filters with different coefficients across a series of MOSCAP radiation sensor which will attenuate the signal and degrade the device form factor. The method and apparatus disclosed achieves the same functionality but with inherent gain instead of attenuation, thus increasing sensitivity. This will improve the minimum resolvable dose for x-rays and low-energy gammas (high-energy gammas will remain the same), and produces a response that can distinguish the energy level of incident radiation photon.