The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Oct. 12, 2012
Tamura Corporation, Tokyo, JP;
Koha Co., Ltd., Tokyo, JP;
Takekazu Masui, Tokyo, JP;
Yu Yamaoka, Tokyo, JP;
TAMURA CORPORATION, Tokyo, JP;
KOHA CO., LTD., Tokyo, JP;
Abstract
Provided are: a method for producing a β-GaOsubstrate of which changes in donor concentration in a reducing atmosphere or an inert gas atmosphere are suppressed; and a method for producing a crystal laminate structure that can epitaxially grow a high-quality crystal film having low variability of quality in a reducing atmosphere or an inert gas atmosphere. The method for producing a β-GaOsubstrate includes a step for cutting out a β-GaOsubstrate from a β-GaOcrystal containing a group IV element; annealing processing in an atmosphere containing a reducing atmosphere and/or an inert gas atmosphere is performed on the β-GaOcrystal before cutting out the β-GaOsubstrate, or on the cut-out β-GaOsubstrate.