The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Oct. 09, 2013
Tamura Corporation, Tokyo, JP;
Koha Co., Ltd., Tokyo, JP;
Shinya Watanabe, Tokyo, JP;
Daiki Wakimoto, Tokyo, JP;
Kazuyuki Iizuka, Tokyo, JP;
Kimiyoshi Koshi, Tokyo, JP;
Takekazu Masui, Tokyo, JP;
TAMURA CORPORATION, Tokyo, JP;
KOHA CO., LTD., Tokyo, JP;
Abstract
A method for growing a β-GaO-based single crystal, can provide a plate-shaped β-GaO-based single crystal having high crystal quality. In one embodiment, a method for growing a β-GaO-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a GaO-based melt, wherein the plate-shaped seed crystal includes a β-GaO-based single crystal having a defect density of not more than 5×10/cmin the whole region; and pulling up the seed crystal to grow a β-GaO-based single crystal.