The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2018
Filed:
Apr. 01, 2015
Applicant:
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Inventors:
Ryosuke Kikuchi, Osaka, JP;
Takaiki Nomura, Osaka, JP;
Kazuhito Hato, Osaka, JP;
Satoru Tamura, Osaka, JP;
Takahiro Kurabuchi, Osaka, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25B 1/04 (2006.01); C25B 11/04 (2006.01); H01G 9/20 (2006.01); C01B 3/04 (2006.01); C25B 1/00 (2006.01);
U.S. Cl.
CPC ...
C25B 1/04 (2013.01); C01B 3/042 (2013.01); C25B 1/003 (2013.01); C25B 11/04 (2013.01); C25B 11/0478 (2013.01); H01G 9/20 (2013.01); Y02E 60/364 (2013.01); Y02E 60/368 (2013.01); Y02P 20/135 (2015.11);
Abstract
The present invention provides a method for generating hydrogen by water splitting at a higher hydrogen generation efficiency. In the present method, used is a photoelectrochemical cell comprising a container, a liquid stored in the container, a semiconductor electrode contained in the container, and a counter electrode contained in the container. The semiconductor electrode comprises a first semiconductor layer, a light-transmissive conductor layer; and a second semiconductor layer.