The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Jan. 26, 2015
Applicants:

Takeshi Nagahisa, Osaka, JP;

Yasukazu Nakatani, Hyogo, JP;

Inventors:

Takeshi Nagahisa, Osaka, JP;

Yasukazu Nakatani, Hyogo, JP;

Assignee:

RICOH COMPANY, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 5/00 (2006.01); H03H 11/12 (2006.01); H03H 7/06 (2006.01); H03H 11/24 (2006.01);
U.S. Cl.
CPC ...
H03H 11/1278 (2013.01); H03H 7/06 (2013.01); H03H 11/1204 (2013.01); H03H 11/126 (2013.01); H03H 11/245 (2013.01);
Abstract

Two types of high-pass filter circuit and a band-pass filter circuit are provided. Both types of high-pass filter circuit include a capacitor configured to input an input signal, a resistor connected between an output terminal of the capacitor and a prescribed bias voltage, and a signal output circuit connected to the output terminal of the capacitor and configured to buffer-amplify the input signal for output. In one of the two types of high-pass filter circuits, the resistor is formed on an SOI semiconductor substrate and includes two PN junction diodes that are inversely connected to each other in parallel. In the other one of the high-pass filter circuits, the resistor is formed on an SOI semiconductor substrate and includes two MOS transistors that are inversely connected to each other in parallel.


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