The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Feb. 14, 2016
Applicant:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Inventor:
Noriaki Matsuno, Tokyo, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, unknown;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/52 (2006.01); H03F 3/195 (2006.01); H01L 27/02 (2006.01); H03F 1/56 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 1/52 (2013.01); H01L 27/0255 (2013.01); H01L 27/0296 (2013.01); H03F 1/565 (2013.01); H03F 3/195 (2013.01); H03F 3/245 (2013.01); H03F 2200/222 (2013.01); H03F 2200/294 (2013.01); H03F 2200/387 (2013.01); H03F 2200/444 (2013.01); H03F 2200/451 (2013.01); H03F 2200/534 (2013.01); H03F 2200/541 (2013.01);
Abstract
A semiconductor integrated circuit includes a low-noise amplifier circuit, a transformer, and an ESD protection circuit. The low-noise amplifier circuit amplifies a radio signal that is supplied to an input terminal. The transformer includes a first winding and a second winding and functions as an input impedance matching circuit for the low-noise amplifier circuit, in which at least one end of the second winding is connected to the input terminal of the low-noise amplifier circuit. The ESD protection circuit is connected to a center tap of the first winding.