The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Sep. 18, 2015
Applicant:
Lockheed Martin Corporatione, Bethesda, MD (US);
Inventors:
Gregory T. Daly, Glendora, NJ (US);
Michael P. Whelan, Hainesport, NJ (US);
Robert C. Bowen, Jr., Mt. Laurel, NJ (US);
Assignee:
Lockheed Martin Corporation, Bethesda, MD (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 51/44 (2006.01); H01L 51/42 (2006.01); H01L 31/0256 (2006.01); H01L 31/068 (2012.01); H01L 31/0304 (2006.01);
U.S. Cl.
CPC ...
H01L 51/447 (2013.01); H01L 51/4213 (2013.01); H01L 31/03044 (2013.01); H01L 31/068 (2013.01); H01L 2031/0344 (2013.01); Y02E 10/00 (2013.01);
Abstract
A high-efficiency solar cell including an Indium, Gallium, Aluminum and Nitrogen (in a combination comprising InGaN, or InAlN, or InGaAlN) alloy which may be blended with a polyhedral oligomeric silsesquioxane (POSS) material, and which may include an absorption-enhancing layer including one of more of carbon nanotubes, quantum dots, and undulating or uneven surface topography.