The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Sep. 18, 2014
Applicant:

Opto Tech Corporation, Hsinchu, TW;

Inventors:

Lung-Han Peng, Taipei, TW;

Yao-Te Wang, Taipei, TW;

Po-Chun Yeh, Taichung, TW;

Po-Ting Lee, New Taipei, TW;

Assignee:

OPTO TECH CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/34 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/26 (2010.01); H01L 33/58 (2010.01); H01L 33/16 (2010.01);
U.S. Cl.
CPC ...
H01L 33/34 (2013.01); H01L 33/06 (2013.01); H01L 33/26 (2013.01); H01L 33/32 (2013.01); H01L 33/16 (2013.01); H01L 33/58 (2013.01);
Abstract

A white LED chip includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first material layer, the active layer includes a second material layer, and the second barrier layer includes a third material layer. The N-type layer is disposed over the tunneling structure. An energy gap of the second material layer is lower than an energy gap of the first material layer and an energy gap of the third material layer. Each of the first material layer, the second material layer and the third material layer is a metal oxide layer, a metal nitride layer or a metal oxynitride layer.


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