The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Mar. 11, 2015
Universität Konstanz, Constance, DE;
Josh Engelhardt, Constance, DE;
Alexander Frey, Constance, DE;
Yvonne Schiele, Constance, DE;
Barbara Terheiden, Constance, DE;
UNIVERSITÄT KONSTANZ, Constance, DE;
Abstract
A method for producing a solar cell is described, in which a plurality of doped regions are to be etched-back selectively or over their entire surface. Once a semiconductor substrate () has been provided, various doped regions () are formed in partial regions of a surface of the semiconductor substrate, the various doped regions () differing as regards their doping concentration and/or their doping polarity. The various doped regions () are then purposively etched-back in order to achieve desired doping profiles, and finally electrical contacts () are formed at least at some of the doped regions (). The etching-back of the various doped regions takes place in a common etching operation in an etching medium. In order that such common etching-back of various doped regions () is possible, it is proposed purposively to adjust both properties of the initially unetched doped regions () and parameters that influence the etching operation with regard to properties of the desired doping profiles within the etched doped regions.