The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Oct. 28, 2016
Applicant:

Lithium Innovations Company, Llc, Toledo, OH (US);

Inventors:

Ford B. Cauffiel, Holland, OH (US);

Alvin D. Compaan, Holland, OH (US);

Victor V. Plotnikov, Toledo, OH (US);

Ambalanath Shan, Toledo, OH (US);

Anthony J. Matthews, Toledo, OH (US);

Robert D. Fisher, Toledo, OH (US);

Song Cheng, Flat Rock, MI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/115 (2006.01); H01L 31/0368 (2006.01); H01L 31/0296 (2006.01); H01L 31/0216 (2014.01); H01L 31/0352 (2006.01); H01L 31/0224 (2006.01); G01T 3/08 (2006.01);
U.S. Cl.
CPC ...
H01L 31/115 (2013.01); G01T 3/08 (2013.01); H01L 31/0296 (2013.01); H01L 31/02161 (2013.01); H01L 31/022408 (2013.01); H01L 31/0368 (2013.01); H01L 31/03529 (2013.01);
Abstract

A particle detector includes a support member. A front electrode layer is disposed over the support member. A semiconductor heterojunction is disposed over the front electrode layer. The semiconductor heterojunction has at least a polycrystalline n-type layer and at least a polycrystalline p-type layer. A back electrode layer is disposed over the semiconductor heterojunction. The back electrode includes at least one removed portion that separates a first portion of the back electrode layer from a second portion of the back electrode layer. The particle detector also includes a first body of electrically insulating material which separates a first portion of the semiconductor heterojunction from a second portion of the semiconductor heterojunction. The first body of electrically insulating material also separates a first portion of the front electrode layer from a second portion of the front electrode layer.


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