The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Jan. 30, 2015
Boe Technology Group Co., Ltd., Beijing, CN;
Seongyeol Yoo, Beijing, CN;
Youngsuk Song, Beijing, CN;
Heecheol Kim, Beijing, CN;
Seungjin Choi, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
The present invention relates to a method for manufacturing a thin film transistor and an array substrate, and corresponding devices. In the thin film transistor manufacturing process, the base substrate is annealed after the formation of the patterns of the active layer, the source and the drain in the thin film transistor, so as to thermally diffuse ions of the source and the drain at an ohmic contact between the active layer and the source, as well as the drain, to the active layer, and further to provide the active layer with ions of the source and the drain for changing the components of the active layer, which reduces the resistance at the ohmic contact between the active layer and the source, as well as the drain, and guarantees the uniformity and reliability of the thin film transistor. Moreover, annealing treatment is relatively simpler in implementation as compared with the plasma treatment, and will not increase the complexity of the method for manufacturing the entire thin film transistor, which is good for thin film transistor production efficiency.