The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Oct. 15, 2015
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventor:
Jian Min, Beijing, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/45 (2006.01); H01L 29/786 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/458 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 29/66757 (2013.01); H01L 29/78603 (2013.01); H01L 29/78675 (2013.01);
Abstract
A low temperature poly-silicon thin film transistor and a manufacturing method thereof are disclosed. The method includes forming an active layer on a base substrate, forming an ohmic contact layer on the active layer through an atomic layer deposition process, and forming a source electrode and a drain electrode on the ohmic contact layer. The ohmic contact layer includes a plurality of conductive ionic layers and a plurality of monocrystalline silicon layers/poly-silicon layers. The source electrode and the drain electrode are in contact with the active layer through the ohmic contact layer.