The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Apr. 13, 2016
Boe Technology Group Co., Ltd., Beijing, CN;
Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Beijing BOE Optoelectronics Technology Co., Ltd., Beijing, CN;
Abstract
A thin-film transistor (TFT) includes a gate electrode, a gate insulation layer, a source electrode, a drain electrode and an active layer arranged on a base substrate. The active layer includes an un-doped a-Si layer, a first doped a-Si layer and a second doped a-Si layer. One of the source electrode and the drain electrode is in contact with the first doped a-Si layer, and the other of the source electrode and the drain electrode is in contact with the second doped a-Si layer. The source electrode and the drain electrode are on different horizontal planes and spaced apart from each other, and the un-doped a-Si layer is positioned between the source electrode and the drain electrode.