The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Nov. 06, 2015
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventor:

Rudolf Rothmaler, Villach, AT;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 21/765 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 21/765 (2013.01); H01L 29/0696 (2013.01); H01L 29/4238 (2013.01); H01L 29/42372 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/1608 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A vertical semiconductor device includes a semiconductor body having a front side, a backside arranged opposite to the front side and a lateral edge delimiting the semiconductor body in a horizontal direction perpendicular to the front side, a gate metallization arranged on the front side and extending at least close to the lateral edge; a contact metallization arranged on the front side and between the lateral edge and the gate metallization, and a backside metallization arranged on the backside and in electric contact with the contact metallization. The gate metallization is arranged around at least two sides of the contact metallization when viewed from above.


Find Patent Forward Citations

Loading…