The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Jun. 23, 2016
Infineon Technologies Americas Corp., El Segundo, CA (US);
Thomas Herman, Manhattan Beach, CA (US);
Infineon Technologies Americas Corp., El Segundo, CA (US);
Abstract
A power semiconductor device includes a III-nitride heterojunction body including a first III-nitride body and a second III-nitride body having a different band gap than that of the first III-nitride body, a first power electrode coupled to the second III-nitride body, a second power electrode coupled to the second III-nitride body, a gate array arrangement disposed between the first and second power electrodes, and a conductive channel that includes a two-dimensional electron gas that in a conductive state includes a reduced charge region under the gate arrangement that is less conductive than its adjacent regions. The reduced charge region extends beyond an edge of the gate arrangement toward one of the power electrodes only.