The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Nov. 09, 2015
Takaaki Negoro, Osaka, JP;
Yoshinori Ueda, Hyogo, JP;
Katsuyuki Sakurano, Hyogo, JP;
Yasukazu Nakatani, Hyogo, JP;
Kazuhiro Yoneda, Osaka, JP;
Katsuhiko Aisu, Hyogo, JP;
Takaaki Negoro, Osaka, JP;
Yoshinori Ueda, Hyogo, JP;
Katsuyuki Sakurano, Hyogo, JP;
Yasukazu Nakatani, Hyogo, JP;
Kazuhiro Yoneda, Osaka, JP;
Katsuhiko Aisu, Hyogo, JP;
RICOH COMPANY, LTD., Tokyo, JP;
Abstract
A semiconductor device for converting incident light into an electric current includes a semiconductor substrate; an electrode embedded in the semiconductor substrate; an insulation film contacting the electrode in the semiconductor substrate; a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a third semiconductor region of the first conductivity type, formed sequentially in a depth direction from a side of a front face of the semiconductor substrate; and a fourth semiconductor region of the second conductivity type contacting the insulation film and the second semiconductor region. An impurity concentration of the fourth semiconductor region is greater than an impurity concentration of the second semiconductor region.