The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Jan. 23, 2017
Brookman Technology, Inc., Shizuoka, JP;
Ikegami Tsushinki Co., Ltd., Tokyo, JP;
Japan Atomic Energy Agency, Ibaraki, JP;
Takashi Watanabe, Shizuoka, JP;
Tomohiro Kamiyanagi, Tokyo, JP;
Kunihiko Tsuchiya, Ibaraki, JP;
Tomoaki Takeuchi, Ibaraki, JP;
BROOKMAN TECHNOLOGY, INC., Shizuoka, JP;
IKEGAMI TSUSHINKI CO., LTD., Tokyo, JP;
JAPAN ATOMIC ENERGY AGENCY, Ibaraki, JP;
Abstract
A radiation tolerant optical detection element includes: a p-type base-body region; a gate insulating film provided on an upper surface of the base-body region; an n-type buried charge-generation region buried in an upper portion of the base-body region; an n-type charge-readout region buried in an upper portion of the base-body region on the inner-contour side of the buried charge-generation region; an n-type reset-drain region buried on the inner-contour side of the charge-readout region; a transparent electrode provided on the gate insulating film above the buried charge-generation region; and a reset-gate electrode provided on a portion of the gate insulating film between the charge-readout region and the reset-drain region.