The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Jun. 30, 2015
Microsoft Technology Licensing, Llc, Redmond, WA (US);
Tamer Elkhatib, San Jose, CA (US);
Vei-Han Chan, San Jose, CA (US);
William Qian, Los Gatos, CA (US);
Onur Can Akkaya, Palo Alto, CA (US);
Swati Mehta, San Mateo, CA (US);
Cyrus Bamji, Fremont, CA (US);
MICROSOFT TECHNOLOGY LICENSING, LLC, Redmond, WA (US);
Abstract
A CMOS time-of-flight image sensor must be robust to interface traps and fixed charges which may be present due to fabrication and which may cause an undesired induced electric field in the silicon substrate. This undesired induced electrical field is reduced by introducing a hydrogen-enriched dielectric material. Further remedial techniques can include applying ultraviolet light and/or performing a plasma treatment. Another possible approach adds a passivation doping layer at a top of the detector as a shield against the undesired induced electric field. One or more of the above techniques can be used to prevent any unstable behavior of the time-of-flight sensor.