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H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01);

U.S. Cl.

CPC ...

H01L 27/0924 (2013.01); H01L 21/76229 (2013.01); H01L 21/76232 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01); H01L 29/7846 (2013.01); H01L 21/82385 (2013.01);

Abstract

An integrated circuit (IC) device includes a fin-type active region formed in a substrate, a step insulation layer on at least one sidewall of the fin-type active region, and a first high-level isolation layer on the at least one sidewall of the fin-type active region. The fin-type active region protrudes from the substrate and extending in a first direction parallel to a main surface of the substrate, includes a channel region having a first conductivity type, and includes the stepped portion. The step insulation layer contacts the stepped portion of the fin-type active region. The step insulation layer is between the first high-level isolation layer and the at least one sidewall of the fin-type active region. The first high-level isolation layer extends in a second direction that is different from the first direction.

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