The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Feb. 29, 2016
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventor:
Shinya Watanabe, Oita Oita, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 23/528 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/528 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 25/50 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13084 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13166 (2013.01); H01L 2224/16112 (2013.01); H01L 2224/16146 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/20752 (2013.01);
Abstract
A semiconductor device includes a substrate, a first electrode located on an upper surface of the substrate, and a second electrode located on a lower surface of the substrate and electrically connected to the first electrode. The semiconductor device further includes a first resist layer located on the upper surface of the substrate so as to surround the first electrode and spaced from the first electrode, and a second resist layer located on the lower surface of the substrate.
Watanabe, Shinya. (2018). Semiconductor device and method for manufacturing the same (U.S. Patent No. 9922957). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9922957
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile