The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Dec. 22, 2016
Applicant:

Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Hubert Moriceau, Saint-Egrève, FR;

Frank Fournel, Villard-Bonnot, FR;

Christophe Morales, ST Pierre de Mesage, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/306 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 2224/275 (2013.01); H01L 2224/2781 (2013.01); H01L 2224/27831 (2013.01); H01L 2224/27845 (2013.01); H01L 2224/29082 (2013.01); H01L 2224/29138 (2013.01); H01L 2224/29187 (2013.01); H01L 2224/29188 (2013.01); H01L 2224/29193 (2013.01); H01L 2224/29194 (2013.01); H01L 2224/8309 (2013.01); H01L 2224/83011 (2013.01); H01L 2224/83048 (2013.01); H01L 2224/83193 (2013.01); H01L 2224/83896 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/05442 (2013.01);
Abstract

This method includes steps a) providing the first structure and second structure, the first structure including a surface on which a silicon layer is formed; b) bombarding the silicon layer by a beam (F) of species configured to reach the surface of the first structure, and to preserve a part of the silicon layer with a surface roughness of less than 1 nm RMS on completion of the bombardment; c) bonding the first structure and second structure by direct bonding between the part of the silicon layer preserved in step b) and the second structure, steps b) and c) being executed in the same chamber subjected to a vacuum of less than 10mbar.


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