The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Feb. 26, 2015
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Paul Gondcharton, Grenoble, FR;

Lamine Benaissa, Massy, FR;

Bruno Imbert, Grenoble, FR;

Hubert Moriceau, Saint-Egreve, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/47 (2006.01); H01L 21/44 (2006.01); H01L 23/00 (2006.01); H01L 21/18 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 21/185 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0381 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03845 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/2745 (2013.01); H01L 2224/2755 (2013.01); H01L 2224/27845 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/80055 (2013.01); H01L 2224/8083 (2013.01); H01L 2224/8092 (2013.01); H01L 2224/80357 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80948 (2013.01); H01L 2224/83895 (2013.01); H01L 2225/06524 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01008 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01016 (2013.01); H01L 2924/01017 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01);
Abstract

A method for producing a structure by direct bonding of two elements, the method including: production of the elements to be assembled and assembly of the elements. The production of the elements to be assembled includes: deposition on a substrate of a TiN layer by physical vapor deposition, and deposition of a copper layer on the TiN layer. The assembly of the elements includes: polishing the surfaces of the copper layers intended to come into contact so that they have a roughness of less than 1 nm RMS and hydrophilic properties, bringing the surfaces into contact, and storing the structure at atmospheric pressure and at ambient temperature.


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