The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Feb. 12, 2015
Mitsubishi Electric Corporation, Tokyo, JP;
Shunichi Watabe, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A first film () is formed on a front surface of a semiconductor wafer (). A second film () is formed on the first film (). A surface protection film () is formed to cover the first film () and second film (). After forming the surface protection film (), a reverse surface of the semiconductor wafer () is etched with a chemical liquid. The first film () is formed on an outer peripheral section of the semiconductor wafer (). The second film () is not formed on the outer peripheral section of the semiconductor wafer (). The first film () and the surface protection film () are adhered to each other in the outer peripheral section of the semiconductor wafer (). The first film () has a higher adhesion to the surface protection film () than the second film ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile