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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9922940 B1

PDFFull Text
Date of Patent:
Mar. 20, 2018

Filed:

Aug. 22, 2016

Semiconductor device including air gaps between interconnects and method of manufacturing the same

Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Takashi Watanabe, Yokkaichi, JP;

Takeshi Arakawa, Yokkaichi, JP;

Assignee:

TOSHIBA MEMORY CORPORATION, Minato-ku, JP;

Attorney:

Oblon, McClelland Maier & Neustadt, L.L.P.

Primary Examiner:

Alexander Oscar Williams

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 27/112 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/7682 (2013.01); H01L 21/76807 (2013.01); H01L 21/76819 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H01L 27/11286 (2013.01);
Abstract

A semiconductor device includes a substrate, and interconnects provided above the substrate. The device further includes a first insulator that is provided on the interconnects and on air gaps provided between the interconnects, surrounds the interconnects from lateral sides of the interconnects, and is formed of a first insulating material. The device further includes a second insulator that surrounds an interconnect region including the interconnects and the air gaps from the lateral sides of the interconnects through the first insulator, includes no portion provided between the interconnects, and is formed of a second insulating material different from the first insulating material.

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Watanabe, Takashi. (2018). Semiconductor device including air gaps between interconnects and method of manufacturing the same (U.S. Patent No. 9922940). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9922940

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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