The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Jul. 23, 2016
Applicant:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Inventor:

Takashi Tonegawa, Ibaraki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/31 (2006.01); H01L 21/44 (2006.01); H01L 21/311 (2006.01); H01L 23/00 (2006.01); H01L 21/3105 (2006.01); H01L 23/482 (2006.01); H01L 23/522 (2006.01); H01L 23/48 (2006.01); H01L 23/31 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/31 (2013.01); H01L 21/311 (2013.01); H01L 21/31056 (2013.01); H01L 21/44 (2013.01); H01L 23/528 (2013.01); H01L 23/53295 (2013.01); H01L 24/03 (2013.01); H01L 24/08 (2013.01); H01L 24/48 (2013.01); H01L 24/85 (2013.01); H01L 23/3171 (2013.01); H01L 23/481 (2013.01); H01L 23/4827 (2013.01); H01L 23/522 (2013.01); H01L 23/53223 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/37 (2013.01); H01L 24/45 (2013.01); H01L 24/73 (2013.01); H01L 24/84 (2013.01); H01L 2224/0215 (2013.01); H01L 2224/02126 (2013.01); H01L 2224/02145 (2013.01); H01L 2224/02206 (2013.01); H01L 2224/02215 (2013.01); H01L 2224/031 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03522 (2013.01); H01L 2224/04034 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05007 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05023 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05582 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/29339 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/37147 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/48799 (2013.01); H01L 2224/48844 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/84801 (2013.01); H01L 2224/85045 (2013.01); H01L 2224/85181 (2013.01); H01L 2224/85203 (2013.01); H01L 2924/0509 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/07025 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/1206 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/35121 (2013.01);
Abstract

Properties of a semiconductor device are improved. A semiconductor device is configured so as to have a protective film provided over an interconnection and having an opening, and a plating film provided in the opening. A slit is provided in a side face of the opening, and the plating film is also disposed in the slit. Thus, the slit is provided in the side face of the opening, and the plating film is also grown in the slit. This results in a long penetration path of a plating solution during subsequent formation of the plating film. Hence, a corroded portion is less likely to be formed in the interconnection (pad region). Even if the corroded portion is formed, a portion of the slit is corroded prior to the interconnection (pad region) at a sacrifice, making it possible to suppress expansion of the corroded portion into the interconnection (pad region).


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