The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Aug. 28, 2014
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Koichiro Nishizawa, Tokyo, JP;
Akira Kiyoi, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/288 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/288 (2013.01); H01L 21/76883 (2013.01);
Abstract
A semiconductor device manufacturing method of present application includes a catalytic step of depositing catalytic metal on a surface of a semiconductor substrate, an oxide removing step of removing oxide formed on the surface of the semiconductor substrate in the catalytic step, an additional catalytic step of depositing catalytic metal on the surface of the semiconductor substrate exposed in the oxide removing step, and a plating step of forming a metal film on the surface of the semiconductor substrate by means of an electroless plating method after the additional catalytic step.