The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Oct. 27, 2015
Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Yen-Lung Li, San Jose, CA (US);

Deepanshu Dutta, Fremont, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/12 (2006.01); G11C 16/28 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01); G11C 16/24 (2006.01); G11C 16/32 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 11/5642 (2013.01); G11C 16/10 (2013.01); G11C 16/12 (2013.01); G11C 16/24 (2013.01); G11C 16/28 (2013.01); G11C 16/32 (2013.01); G11C 16/0483 (2013.01); G11C 2211/5621 (2013.01);
Abstract

Methods and systems for verifying two or more programming states at the same time are described. During a program verify operation, two or more memory cell threshold voltage levels may be concurrently verified by applying a word line voltage to a plurality of memory cells, applying two or more different bit line voltages to the plurality of memory cells, and sensing the plurality of memory cells while the two or more different bit line voltages are applied to the plurality of memory cells. The bit line voltages applied during the program verify operation may allow a first set of the plurality of memory cells to be sensed at a first voltage level while a second set of the plurality of memory cells are sensed at a second voltage level different from the first voltage level.


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