The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Aug. 31, 2016
Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Tsuyoshi Atsumi, Ota Tokyo, JP;

Yasuhiko Kurosawa, Fujisawa Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/10 (2006.01); G06F 3/06 (2006.01); G06F 7/58 (2006.01); G11C 16/10 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G06F 3/064 (2013.01); G06F 3/0619 (2013.01); G06F 3/0679 (2013.01); G06F 7/58 (2013.01); G11C 7/1006 (2013.01); G11C 7/1036 (2013.01); G11C 16/10 (2013.01); G11C 16/349 (2013.01);
Abstract

A semiconductor memory device includes a NAND memory including a plurality of blocks, each of which is a unit of data erasing, and a controller. The controller is configured to select an initial value from a group of initial values, based on an address of the NAND memory in which data are to be written, set a value corresponding to the selected initial value to a linear feedback shift register circuit, randomize the data using an output value of the linear feedback shift register circuit, and write the randomized data to the address of the NAND memory. A size of each of the blocks S is smaller than 2bytes, n being a number of registers included in the linear feedback shift register circuit.


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