Memory system and method including determining a read voltage based on program order information and a plurality of mapping tables

Abstract

A method of operating a memory system, including a memory device, includes managing program order information of the memory device based on a program order stamp (POS) indicating a relative temporal relationship between program operations of a plurality of memory groups that are included in the memory device. The method includes generating a first mapping table that stores a read voltage offset and an upper POS corresponding to the read voltage offset, by using a plurality of voltage levels that are sequentially decreased or reduced, and generating a second mapping table that stores the read voltage offset and a lower POS corresponding to the read voltage offset, by using a plurality of voltage levels that are sequentially increased. A read voltage for performing a read operation on the memory device is variably determined based on the first and second mapping tables and the program order information.