The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2018

Filed:

Jul. 10, 2017
Applicant:

AU Optronics Corporation, Hsinchu, TW;

Inventors:

Shin-Shueh Chen, Hsinchu County, TW;

Yi-Wei Chen, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G06F 3/041 (2006.01); G02F 1/1368 (2006.01); G02F 1/1362 (2006.01); G02F 1/1333 (2006.01); G06F 3/042 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0412 (2013.01); G02F 1/1368 (2013.01); G02F 1/13338 (2013.01); G02F 1/133345 (2013.01); G02F 1/136209 (2013.01); G02F 1/136286 (2013.01); G06F 3/042 (2013.01); H01L 27/127 (2013.01); H01L 29/4908 (2013.01); G02F 1/136213 (2013.01); G02F 1/136227 (2013.01); G02F 2001/13685 (2013.01); G02F 2001/133357 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01); G02F 2202/104 (2013.01); G06F 2203/04103 (2013.01); H01L 27/1214 (2013.01); H01L 29/78633 (2013.01);
Abstract

A method for fabricating a touch display device is provided. The method includes: forming a sensor on a substrate, and forming a sensing signal line electrically connected to the sensor. The method of forming the sensor includes: forming a semiconductor layer including a semiconductor pattern of the sensor on the substrate, forming a gate insulation layer on the semiconductor layer, forming a first conductor layer on the gate insulation layer, forming an interlayered insulation layer on the gate insulation layer, performing an annealing process, removing the interlayered insulation layer on a gate predetermined region after the annealing process is performed, removing the first conductor layer on the gate predetermined region, forming a gate in the gate predetermined region, and forming a second conductor layer including a source and a drain of the sensor respectively electrically connected to the semiconductor pattern of the sensor.


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