P-type isolation regions adjacent to semiconductor laser facets

Abstract

A quantum cascade laser and its method of fabrication are provided. The quantum cascade laser comprises one or more p-type electrical isolation regions and a plurality of electrically isolated laser sections extending along a waveguide axis of the laser. An active waveguide core is sandwiched between upper and lower n-type cladding layers and the active core and the upper and lower n-type cladding layers extend through the electrically isolated laser sections of the quantum cascade laser. A portion of the upper n-type cladding layer comprises sufficient p-type dopant to have become p-type and to have become an electrical isolation region, which extends across at least a part of the thickness upper n-type cladding layer along a projection separating the sections of the quantum cascade laser. Laser structures are also contemplated where isolation regions are solely provided at the window facet sections of the laser to provide vertical isolation in the facet sections, to reduce the current into the facet regions of the laser, and help minimize potentially harmful facet heating.